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Thread: 100W pulsed 405nm devolped

  1. #1
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    Default 100W pulsed 405nm devolped

    http://www.sony.net/SonyInfo/News/Pr...20E/index.html



    ohoku University and Sony Corporation jointly develop the world’s first*1
    blue-violet ultrafast pulsed semiconductor laser with 100 watt output
    - The path to practical light-source in next-generation large-capacity optical disc storage & for nano-fabrication -

    Tohoku University
    Sony Corporation

    Professor Hiroyuki Yokoyama of the New Industry Creation Hatchery Center (NICHe), Tohoku University (hereafter, 'Tohoku University'), and Advanced Materials Laboratories, Sony Corporation (hereafter, 'Sony'), have succeeded in jointly developing a blue-violet ultrafast pulsed semiconductor laser*2 with dramatically improved peak laser beam output levels that are 100 times that of the world's current highest levels.



    Beam emitted by the blue-violet ultrafast pulsed semiconductor laser.
    (Arrow indicates the semiconductor optical amplifier)


    The newly-developed blue-violet semiconductor laser (right)
    The newly-developed semiconductor optical amplifier (left)


     This latest successful development is an all-semiconductor laser picosecond pulse source with a laser wavelength of 405 nanometers (1 nm = one-billionth of a meter) in the blue-violet region. It is capable of generating optical pulses in the ultrafast duration of 3 picoseconds (1 picosecond = one-trillionth of a second), with ultrahigh output peak power of 100 watts and repetition frequency of 1 gigahertz. Advanced control of the newly-developed and proprietarily-constructed GaN-based mode-locked semiconductor laser*3 and semiconductor optical amplifier*4 have enabled peak output power in excess of 100 watts to be achieved, which is more than a hundred times the world’s highest output value for conventional blue-violet pulse semiconductor lasers.
     Although there have been ultra high-output laser devices combining solid-state lasers*5 and a second harmonic generation unit for high functionality and high-value leading-edge chemical research applications in the past, the light source box itself was bulky and a specialist technician was required to ensure the stable operation of the laser. There are high expectations that this newly-developed semiconductor laser system, which incorporates semiconductor diodes, can have a much wider range of future applications. For instance, this technology enables the size of components such as the light source box to be drastically reduced.

    This newly-developed ultra high-output, ultrafast pulsed semiconductor laser light source is capable of using a nonlinear optical process known as two-photon absorption*6, which occurs only as a result of high intensity optical pulses. When light from the laser beam is concentrated on the lens, it creates chemical and thermal changes in the vicinity of the lens focus spot which is narrower than even the diameter of the focus spot of the lens itself. It is anticipated that application of these properties will be possible in a wide range of fields such as three-dimensional (3D) nano-fabrication of inorganic/organic materials in the order of nanometers, and next-generation large-capacity optical disc storage.

     Sony tested the principles for applying this technology in next-generation large-capacity optical disc-storage by creating void marks with a diameter of approximately 300 nanometers at intervals of 3 micrometers on the interior of plastic material, and successfully read these marks with the laser beam.

     These experimental results have been achieved through integration of Tohoku University’s fundamental technology on ultrashort pulse lasers (Tohoku University is promoting joint research program for industry-academic collaboration based on materials and devices), and Sony’s fundamental technology on semiconductor laser diodes. Hereafter, Tohoku University and Sony will work to further develop its fundamental technology for creating even higher output and multi-functionality, while developing the practical applications of this technology to make these systems even more compact and stable.

     These research findings were also published in the latest edition of the US academic journal, 'Applied Physics Letters'. (Appl. Phys. Lett. volume 97, issue 2, page 021101 (2010); doi:10.1063/1.3462942 (3 pages), Online Publication Date: 12 July 2010 )
    * Outline of the blue-violet ultrafast pulsed semiconductor laser system
    * Temporal waveforms of light using streak camera measurement



    * Performance characteristics of an experimental blue-violet ultrafast pulsed semiconductor laser

     Laser wavelength: 405 nm (GaN-based semiconductor laser)
     Peak optical output: 100W or more
     Repetition frequency: 1 GHz
     Pulse width: 3 ps

    * Testing the principle of optical disc storage using an experimental laser

  2. #2
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    Quote Originally Posted by mccarrot View Post
    http://www.sony.net/SonyInfo/News/Pr...20E/index.html



    ohoku University and Sony Corporation jointly develop the world’s first*1
    blue-violet ultrafast pulsed semiconductor laser with 100 watt output
    - The path to practical light-source in next-generation large-capacity optical disc storage & for nano-fabrication -

    Tohoku University
    Sony Corporation

    Professor Hiroyuki Yokoyama of the New Industry Creation Hatchery Center (NICHe), Tohoku University (hereafter, 'Tohoku University'), and Advanced Materials Laboratories, Sony Corporation (hereafter, 'Sony'), have succeeded in jointly developing a blue-violet ultrafast pulsed semiconductor laser*2 with dramatically improved peak laser beam output levels that are 100 times that of the world's current highest levels.



    Beam emitted by the blue-violet ultrafast pulsed semiconductor laser.
    (Arrow indicates the semiconductor optical amplifier)


    The newly-developed blue-violet semiconductor laser (right)
    The newly-developed semiconductor optical amplifier (left)


     This latest successful development is an all-semiconductor laser picosecond pulse source with a laser wavelength of 405 nanometers (1 nm = one-billionth of a meter) in the blue-violet region. It is capable of generating optical pulses in the ultrafast duration of 3 picoseconds (1 picosecond = one-trillionth of a second), with ultrahigh output peak power of 100 watts and repetition frequency of 1 gigahertz. Advanced control of the newly-developed and proprietarily-constructed GaN-based mode-locked semiconductor laser*3 and semiconductor optical amplifier*4 have enabled peak output power in excess of 100 watts to be achieved, which is more than a hundred times the world’s highest output value for conventional blue-violet pulse semiconductor lasers.
     Although there have been ultra high-output laser devices combining solid-state lasers*5 and a second harmonic generation unit for high functionality and high-value leading-edge chemical research applications in the past, the light source box itself was bulky and a specialist technician was required to ensure the stable operation of the laser. There are high expectations that this newly-developed semiconductor laser system, which incorporates semiconductor diodes, can have a much wider range of future applications. For instance, this technology enables the size of components such as the light source box to be drastically reduced.

    This newly-developed ultra high-output, ultrafast pulsed semiconductor laser light source is capable of using a nonlinear optical process known as two-photon absorption*6, which occurs only as a result of high intensity optical pulses. When light from the laser beam is concentrated on the lens, it creates chemical and thermal changes in the vicinity of the lens focus spot which is narrower than even the diameter of the focus spot of the lens itself. It is anticipated that application of these properties will be possible in a wide range of fields such as three-dimensional (3D) nano-fabrication of inorganic/organic materials in the order of nanometers, and next-generation large-capacity optical disc storage.

     Sony tested the principles for applying this technology in next-generation large-capacity optical disc-storage by creating void marks with a diameter of approximately 300 nanometers at intervals of 3 micrometers on the interior of plastic material, and successfully read these marks with the laser beam.

     These experimental results have been achieved through integration of Tohoku University’s fundamental technology on ultrashort pulse lasers (Tohoku University is promoting joint research program for industry-academic collaboration based on materials and devices), and Sony’s fundamental technology on semiconductor laser diodes. Hereafter, Tohoku University and Sony will work to further develop its fundamental technology for creating even higher output and multi-functionality, while developing the practical applications of this technology to make these systems even more compact and stable.

     These research findings were also published in the latest edition of the US academic journal, 'Applied Physics Letters'. (Appl. Phys. Lett. volume 97, issue 2, page 021101 (2010); doi:10.1063/1.3462942 (3 pages), Online Publication Date: 12 July 2010 )
    * Outline of the blue-violet ultrafast pulsed semiconductor laser system
    * Temporal waveforms of light using streak camera measurement



    * Performance characteristics of an experimental blue-violet ultrafast pulsed semiconductor laser

     Laser wavelength: 405 nm (GaN-based semiconductor laser)
     Peak optical output: 100W or more
     Repetition frequency: 1 GHz
     Pulse width: 3 ps

    * Testing the principle of optical disc storage using an experimental laser

    ok, so as soon as this comes out for sale... i think a PL combined effort should be made to combine as many as possible with the 445nm diodes, 635-660nm diodes and a laserscope to create the highest power visible laser in the world. Maybe 300+Watts????? RRGBV

    We can set a new Guiness Book record....

  3. #3
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    Sep 2006
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    Peak optical output: 100W
    Repetition frequency: 1 GHz
    Pulse width: 3 ps

    Makes 300W quasi CW, so this diode is practical useless for show use.
    It would obviously take something more sophisticated than a flexmod to drive these.

    Laser induced airbreakdown from a 5.6 can laser would be awesome though!
    Last edited by -bart-; 07-23-2010 at 04:16.

  4. #4
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    May 2009
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    UCSB
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    It is actually a bit less even, 100w is the peak power, the integrated power will be about half (it usually works out to something like 1/sqrt(pi) if you do the necessary calculus) so even with the external amp its still only about 0.1mw of average power.

    That said, 100w peak power for a mode locked laser, while impressive for this setup, is actually pretty pathetic when compared to er:glass/ti:saph based systems which will have peak powers in the megawatt/gigawatt range.

    I would be more interested in getting my hands on their 400nm tapered amp and driving it CW, it should be possible to get several watts of singlemode 400nm power. A 440nm one would be even nicer

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